Features • Medium current Triac • High static and dynamic commutation • Low thermal resistance with clip bonding • Packages is RoHS (2002/95/EC) compliant • 600 V VRM • UL certified (ref. file E81734) Applications •...
Technical Attributes Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 50 A Maximum Drain Source Voltage 60 V Maximum Gate Source Voltage ±20 V Mounting Through...
Technical Attributes Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 60 A Maximum Drain Source Voltage 60 V Maximum Gate Source Voltage ±20 V Mounting Through...
Type Designator: PN3565 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.36 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base...
Characteristics of the PN2222A bipolar transistor Type - NPN Collector-Emitter Voltage: 40 V Collector-Base Voltage: 75 V Emitter-Base Voltage: 6 V Collector Current: 1 A Collector Dissipation - 0.625 W DC Current Gain (hfe) - 100 to 300 Transition Frequency - 300 MHz Noise Figure - 4 dB...
Technical SpecificationsCentral Semiconductor PN2907A technical specifications, attributes, and parameters. Physical Case/Package TO-92 Mount Through Hole Technical Collector Base Voltage (VCBO) 60 V Collector Emitter Breakdown Voltage 60 V Collector Emitter Saturation Voltage...
