Characteristics of the BC560 bipolar transistor Type - PNP Collector-Emitter Voltage: -45 V Collector-Base Voltage: -50 V Emitter-Base Voltage: -5 V Collector Current: -0.1 A Collector Dissipation - 0.5 W DC Current Gain (hfe) - 110 to 800 Transition Frequency - 150 MHz Noise Figure - 1 dB...
Pin Configuration Pin Number Pin Name Description 1 Collector Current flows in through collector 2 Base Controls the biasing of transistor 3 Emitter Current Drains out through emitter Features...
Features Bi-Polar PNP Transistor DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 100mA Emitter Base Voltage (VBE) is 6V Base Current(IB) is 5mA maximum Available in...
Features / Technical Specifications Package Type: TO-92 Transistor Type: PNP Max Collector Current(IC): -100mA Max Collector-Emitter Voltage (VCE): -65V Max Collector-Base Voltage (VCB): -80V Max Emitter-Base Voltage (VBE): -5V Max Collector Dissipation (Pc): 500 Milliwatt Max Transition...
Features / technical specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(IC): 100mA Max Collector-Emitter Voltage (VCE): 45V Max Collector-Base Voltage (VCB): 50V Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 500 miliWatt Max Transition...
Technical Attributes Description Value Configuration Single Lead Finish Matte Tin Maximum Base Emitter Saturation Voltage 2.5@12mA@3A V Maximum Collector Base Voltage 80 V Maximum Collector Cut-off Current 200 uA Maximum...
Bi-Polar NPN Transistor DC Current Gain (hFE) is 800 maximum Continuous Collector current (IC) is 100mA Emitter Base Voltage (VBE) is 6V Base Current(IB) is 5mA maximum Available in To-92...
BD138 Bipolar Transistor Characteristics of the BD138 bipolar transistor Type - PNP Collector-Emitter Voltage: -60 V Collector-Base Voltage: -60 V Emitter-Base Voltage: -5 V Collector Current: -1.5 A Collector Dissipation - 12.5 W DC Current Gain (hfe) - 40 to 250 Operating and Storage...
