Technical Attributes Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 50 A Maximum Drain Source Voltage 60 V Maximum Gate Source Voltage ±20 V Mounting Through...
Type Designator: PN3565 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.36 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base...
Characteristics of the PN2222A bipolar transistor Type - NPN Collector-Emitter Voltage: 40 V Collector-Base Voltage: 75 V Emitter-Base Voltage: 6 V Collector Current: 1 A Collector Dissipation - 0.625 W DC Current Gain (hfe) - 100 to 300 Transition Frequency - 300 MHz Noise Figure - 4 dB...
Technical SpecificationsCentral Semiconductor PN2907A technical specifications, attributes, and parameters. Physical Case/Package TO-92 Mount Through Hole Technical Collector Base Voltage (VCBO) 60 V Collector Emitter Breakdown Voltage 60 V Collector Emitter Saturation Voltage...
Pin Configuration Pin Number Pin Name Description 1 Emitter Current Drains out through emitter, normally connected to ground 2 Base Controls the biasing of transistor, Used to turn ON or OFF...
Characteristics of the MJE3055T bipolar transistor Type - NPN Collector-Emitter Voltage: 60 V Collector-Base Voltage: 70 V Emitter-Base Voltage: 5 V Collector Current: 10 A Collector Dissipation - 75 W DC Current Gain (hfe) - 20 to 100 Transition Frequency - 2 MHz Operating and Storage...
