Transistors (148)

IRF830P Transistor,  N-MOSFET, 500V, 2.9A

Technical Attributes Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 14 A Maximum Drain Source Voltage 500 V Maximum Gate Source Voltage ±20 V Mounting Through...

IRF1405 Transistor,  N-MOSFET, 55V, 133A

Features: Small signal N-Channel MOSFET Continuous Drain Current (ID) is 33A at 25°C Pulsed Drain Current (ID-peak) is 110A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage...

The CA3096 are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a...

Applications • Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range • Custom Designed Differential Amplifiers • Temperature Compensated Amplifiers • See...