Features Plastic casing NPN Transistor Continuous Collector current (IC) is 1.5A Collector-Emitter voltage (VCE) is 80 V Collector-Base voltage (VCB) is 80V Emitter Base Breakdown Voltage (VBE) is 5V DC...
Technical Attributes Description Value Lead Finish Tin/Copper Max Processing Temp 260 Maximum Gate Trigger Current 30 mA Maximum Gate Trigger Voltage 1.5 V Mounting Through Hole MSL Level 1 Operating...
Characteristics of the BC560 bipolar transistor Type - PNP Collector-Emitter Voltage: -45 V Collector-Base Voltage: -50 V Emitter-Base Voltage: -5 V Collector Current: -0.1 A Collector Dissipation - 0.5 W DC Current Gain (hfe) - 110 to 800 Transition Frequency - 150 MHz Noise Figure - 1 dB...
Pin Configuration Pin Number Pin Name Description 1 Collector Current flows in through collector 2 Base Controls the biasing of transistor 3 Emitter Current Drains out through emitter Features...
Features Bi-Polar PNP Transistor DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 100mA Emitter Base Voltage (VBE) is 6V Base Current(IB) is 5mA maximum Available in...
Features / Technical Specifications Package Type: TO-92 Transistor Type: PNP Max Collector Current(IC): -100mA Max Collector-Emitter Voltage (VCE): -65V Max Collector-Base Voltage (VCB): -80V Max Emitter-Base Voltage (VBE): -5V Max Collector Dissipation (Pc): 500 Milliwatt Max Transition...
Features / technical specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(IC): 100mA Max Collector-Emitter Voltage (VCE): 45V Max Collector-Base Voltage (VCB): 50V Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 500 miliWatt Max Transition...
