Features / technical specifications: Package Type: TO-92 Transistor Type: NPN Darlington Max Collector Current(IC): 1.2A Max Collector-Emitter Voltage (VCE): 30V Max Collector-Base Voltage (VCB): 40V Max Emitter-Base Voltage (VEBO): 10V Max Collector Dissipation (Pc): 625 miliWatt Max...
Features / technical specifications: Package Type: TO-92 Transistor Type: NPN Max Collector Current(IC): 800mA Max Collector-Emitter Voltage (VCE): 30V Max Collector-Base Voltage (VCB): 25V Max Emitter-Base Voltage (VEBO): 5V Max Collector Dissipation (Pc): 625 miliWatt Max Transition...
Features General Purpose NPN Amplifier Transistor Current Gain (hFE), 100 to 630 Continuous Collector current (IC) is 800mA Collector-Emitter voltage (VCEO) is 45 V Collector-Base voltage (VCB0) is 50V Emitter...
Type - NPN Collector-Emitter Voltage: 20 V Collector-Base Voltage: 30 V Emitter-Base Voltage: 5 V Collector Current: 0.1 A Collector Dissipation - 0.3 W DC Current Gain (hfe) - 200 to 800 Transition Frequency - 150 MHz Noise Figure - 1.5 dB Operating and Storage Junction Temperature Range -65...
Characteristics of the BC108 bipolar transistor Type - NPN Collector-Emitter Voltage: 20 V Collector-Base Voltage: 30 V Emitter-Base Voltage: 5 V Collector Current: 0.1 A Collector Dissipation - 0.3 W DC Current Gain (hfe) - 110 to 800 Transition Frequency - 150 MHz Noise Figure - 2 dB...
Pin Configuration Pin Number Pin Name Description 1 Emitter Current Drains out through emitter, normally connected to ground 2 Base Controls the biasing of transistor, Used to turn ON or...
Technical Attributes Description Value Lead Finish Tin/Lead Max Processing Temp 240 Maximum Collector Base Voltage 230 V Maximum Collector Emitter Saturation Voltage 1.5@50mA@500mA V Maximum Collector Emitter Voltage 230 V...
