Features • 11A, 200V • rDS(ON) = 0.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High...
Technical Attributes Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 14 A Maximum Drain Source Voltage 500 V Maximum Gate Source Voltage ±20 V Mounting Through...
Features: Small signal N-Channel MOSFET Continuous Drain Current (ID) is 33A at 25°C Pulsed Drain Current (ID-peak) is 110A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage...
The CA3096 are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors (two PNP and three NPN types) on a common substrate, which has a...
