IRGP4063DPBF Power IGBT, 600V, 96A

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (ON) Trench IGBT Technology

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 μS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (ILM)

• Positive VCE (ON) Temperature co-efficient

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI