Transistors (148)

Technical Attributes Description Value Configuration Single Lead Finish Tin Maximum Collector Base Voltage 100 V Maximum Collector Cut-off Current 50 uA Maximum Collector Emitter Saturation Voltage 2.5@80mA@8A V Maximum Collector...

Characteristics of the TIP142 bipolar transistor Type - NPN Collector-Emitter Voltage: 100 V Collector-Base Voltage: 100 V Emitter-Base Voltage: 5 V Collector Current: 10 A Collector Dissipation - 125 W DC Current Gain (hfe) - 1000 Operating and Storage Junction Temperature Range -65...

Pin configuration (Pinout) of the TIP132 Here is an image showing the pin diagram of the this transistor.

Features / technical specifications: Package Type: TO-220 Transistor Type:  PNP Max Collector Current(IC): –5A Max Collector-Emitter Voltage (VCE): –100V Max Collector-Base Voltage (VCB): –100V Max Emitter-Base Voltage (VEBO): –5V Max Collector Dissipation (Pc): 65 Watt Minimum &...

Features: Darlington Medium-power NPN Transistor High DC Current Gain (hFE), typically 1000 Continuous Collector current (IC) is 5A Collector-Emitter voltage (VCE) is 100 V Collector-Base voltage (VCB) is 100V Emitter...

Characteristics of the TIP102 bipolar transistor Type - NPN Collector-Emitter Voltage: 100 V Collector-Base Voltage: 100 V Emitter-Base Voltage: 5 V Collector Current: 8 A Collector Dissipation - 80 W DC Current Gain (hfe) - 1000 to 20000 Operating and Storage Junction Temperature Range -65...

Features • Medium current Triac  • High static and dynamic commutation  • Low thermal resistance with clip bonding • Packages is RoHS (2002/95/EC) compliant • 600 V VRM • UL certified (ref. file E81734) Applications •...