SKU: 2N3/391/A
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2N3391A (Bipolar Junction Transistor (BJT) NPN 25V 500mA 625mW)

8.00 SAR 9.20 SAR

Tax included.

DESCRIPTION

Technical Specifications

National Semiconductor 2N3391A technical specifications, attributes, and parameters.

Physical
Case/Package	TO-92
Mount	Through Hole
Number of Pins	3
Technical
Collector Base Voltage (VCBO)	25 V
Collector Emitter Breakdown Voltage	25 V
Collector Emitter Voltage (VCEO)	25 V
Current Rating	500 mA
Element Configuration	Single
Emitter Base Voltage (VEBO)	5 V
hFE Min	250
Max Collector Current	500 mA
Max Operating Temperature	150 °C
Max Power Dissipation	625 mW
Min Operating Temperature	-55 °C
Number of Elements	1
Polarity	NPN
Power Dissipation	625 mW
Voltage Rating (DC)	25 V
Compliance
Lead Free	Lead Free
RoHS	Compliant

ADDITIONAL INFORMATION

This is an approximate conversion table to help you find your size.

Italian	Spanish	German	UK	US	Japanese	Chinese	Russian	Korean
34	30	28	4	00	3	155/75A	36	44
36	32	30	6	0	5	155/80A	38	44
38	34	32	8	2	7	160/84A	40	55
40	36	34	10	4	9	165/88A	42	55
42	38	36	12	6	11	170/92A	44	66
44	40	38	14	8	13	175/96A	46	66
46	42	40	16	10	15	170/98A	48	77
48	44	42	18	12	17	170/100B	50	77
50	46	44	20	14	19	175/100B	52	88
52	48	46	22	16	21	180/104B	54	88

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